? 2008 ixys corporation, all rights reserved ds100065(10/08) v dss = 900v i d25 = 43a r ds(on) 160m t rr 300ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c43a i dm t c = 25 c, pulse width limited by t jm 104 a i a t c = 25 c26a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g IXFN52N90P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 900 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 4 ma r ds(on) v gs = 10v, i d = 26a, note 1 160 m g d s s minibloc, sot-227 e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. polar tm power mosfet hiperfet tm preliminary technical information features z international standard package z minibloc, with aluminium nitride isolation z avalanche rated z low package inductance z fast intrinsic diode advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. IXFN52N90P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 26a, note 1 20 35 s r gi gate input resistance 1.56 c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1180 pf c rss 24 pf t d(on) resistive switching times 63 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 26a 80 ns t d(off) r g = 1 (external) 95 ns t f 42 ns q g(on) 308 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 26a 117 nc q gd 132 nc r thjc 0.14 c/w r thcs 0.05 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 56 a i sm repetitive, pulse width limited by t jm 208 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.8 c i rm 26 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 26a, -di/dt = 100a/ s v r = 100v sot-227b outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved IXFN52N90P fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0123456789 v ds - volts i d - amperes v gs = 10v 9v 8v 7v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 8v 9v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 50 55 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on) normalized to i d = 26a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 52a i d = 26a fig. 5. r ds(on) normalized to i d = 26a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFN52N90P ixys ref: f_52n90p(97)10-24-08 fig. 7. input admittance 0 10 20 30 40 50 60 70 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 1020304050607080 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 450v i d = 26a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
